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(6) Limit R DSon = V DS /ID Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air  - 415 480 K/W  - 350 400 K/W R th(j-sp) thermal resistance from junction to solder point - - 150 K/W Downloaded from Arrow. BSSPW All information provided in this document is subject to legal
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SIPMOS Small-Signal-Transistor Product Summary D=0.01 A, R G=6 V DD=400 V, I D=10 mA, V GS=-3 to 5 V Rev. 2.1 page 3 2012-03-14 Reverse Diode Diode continous forward current I S - - 0.016 A Diode pulse current I S,pulse - - 0.064 Diode forward voltage V SD V GS=-5 V, I F=16 mA, T j=25 °C - 0.81 1.2 V Reverse recovery time t rr - 160 240 ns Reverse recovery charge Q rr - 13.2 19.8 nC V
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